MBRA120ET3 |
RFQ for MBRA120ET3 Required Field |
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| Technical/Catalog Information | MBRA120ET3G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 20V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 530mV @ 1A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10A @ 20V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Packaging | Tape & Reel (TR) |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MBRA120ET3G MBRA120ET3G MBRA120ET3GOS ND MBRA120ET3GOSND MBRA120ET3GOS |
| Product | Manufacturers | Pack | D/C |
| MBRA120ET3 | ON Semiconductor | DO214A | 06+ |
Features |
| • Compact Package with J−Bend Leads Ideal for Automated Handling• Highly Stable Oxide Passivated Junction• Guardring for Over−Voltage Protection• Optimized for Low Leakage Current |
| Rating | Symbol | Value | Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
20 | V |
| Average Rectified Forward Current (At Rated VR, TC = 125°C) |
IO | 1.0 | A |
| Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) |
IFSM | 40 | A |
| Storage Temperature | Tstg | −55 to +150 | °C |
| Operating Junction Temperature | TJ | −55 to +150 | °C |
| Voltage Rate of Change (Rated VR, TJ = 25°C) |
dv/dt | 10.000 | V/s |
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